mbrb1090-m3, MBRB10100-M3 www.vishay.com vishay general semiconductor revision: 15-may-13 1 document number: 87981 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high-voltage trench mos barrier schottky rectifier features ? trench mos schottky technology ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-st d-020, lf maximum peak of 245 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency rect ifier of switching mode power supplies, freewheeling diodes, dc/dc converters, or polarity protection application. mechanical data case: to-263ab molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms primary characteristics package to-263ab i f(av) 10 a v rrm 90 v, 100 v i fsm 150 a v f 0.65 v t j max. 150 c diode variation single die pin 1 pin 2 k heatsink mbrb1090 mbrb10100 tmbs ? to-263ab 1 2 k maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbrb1090 mbrb10100 unit maximum repetitive pe ak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t c = 133 c i f(av) 10 a peak forward surge current 8.3 ms si ngle half sine-w ave superimposed on rated load i fsm 150 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol max. unit maximum instantaneous ? forward voltage (1) i f = 10 a t c = 25 c v f 0.80 v i f = 10 a t c = 125 c 0.65 i f = 20 a t c = 125 c 0.75 maximum reverse current per at working peak reverse voltage (2) t j = 25 c i r 100 a t j = 125 c 6.0 ma
mbrb1090-m3, MBRB10100-M3 www.vishay.com vishay general semiconductor revision: 15-may-13 2 document number: 87981 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves ? (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetiti ve peak forward surge current fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbrb unit typical thermal resistance r ? ja 60 c/w r ? jc 2.0 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-263ab mbrb10100ct-m3/4w 1.384 4w 50/tube tube to-263ab mbrb10100ct-m3/8w 1.384 8w 800/reel tape and reel 0 2 4 6 10 0 50 100 150 8 average forward current (a) case temperature (c) resistive or inductive load 40 60 100 80 140 120 160 1 100 10 t j = t j max. 8.3 ms single half sine-wave n umber of cycles at 60 hz peak forward surge current (a) 0 0.2 0.1 0.5 1.0 0.4 0.3 1 100 10 0.01 0.1 0.6 0.7 0.8 0.9 instantaneous forward voltage (v) instantaneous forward current (a) t j = 150 c t j = 125 c t j = 25 c percent of rated peak reverse voltage (%) instantaneous reverse current (ma) 20 10 100 40 60 80 1 10 0.01 0.1 100 0.001 30 50 70 90 t j = 150 c t j = 125 c t j = 25 c
mbrb1090-m3, MBRB10100-M3 www.vishay.com vishay general semiconductor revision: 15-may-13 3 document number: 87981 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) ? 1 10 100 1000 10 000 10 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 0.01 10 1 100 10 100 0.1 0.1 1 t - pulse duration (s) transient thermal impedance (c/w) junction to case 0.380 (9.65) 0.41 1 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591(15.00) 0.624 (15.85) 1 2 0.245 (6.22) mi n k k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.110 (2.79) 0.090 (2.29) 0.047 (1.19) 0.055 (1.40) 0 to 0.01 (0 to 0.254) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) to-263ab 0.105 (2.67) 0.08 (0.095) (2.41) (2.032) 0.42 (10.66) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) 0.33 (8.38) mountin g pad layout mi n . mi n . mi n . mi n .
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